[17p-F314-1~13] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[17p-F314-7] Core-shell dual-gated InAs nanotube FET

〇Satoshi Sasaki¹, Kouta Tateno¹, Guoqiang Zhang¹ (1.NTT BRL)

Keywords:nanotube, InAs, FET

A nanotube dual-gated FET with an additiona core-gate is theoretically proposed to improve performance of the conventional gate-all-around geometry. We have fabricated such core-shell dual-gated InAs nanotube FETs. InAs nanotube channel was prepared by selective wet-etching of the InP core from InP/InAs core-shell nanowire, followed by atomic-layer-deposition of Al₂O₃/ZnO gate stack. The fabricated device exhibited an improved on/off ratio exceeding 10⁵, implying advantage of the present dual-gated design.