The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[17p-F314-1~13] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Sat. Mar 17, 2018 2:00 PM - 5:30 PM F314 (61-314)

Yukihiro Harada(Kobe Univ.), Haruki Sanada(NTT)

3:15 PM - 3:30 PM

[17p-F314-6] The mechanisms and control of InAs/GaAs submonolayer growth

〇(M1)Hiroto Mizuno1, Yuwei Zhang1, Itaru Kamiya1 (1.Toyota Tech. Inst.)

Keywords:submonolayer

The growth mechanisms of InAs / GaAs submonolayer (SML) structures for the growth control of quantum well island (QWI) structures have been investigated. Samples with different number of SML stacks of InAs are prepared by MBE and studied by RHEED, AFM and PL. The shape of the QWI structures have been observed to change with the number of SML stacks, which has been tentatively attributed to the transition in the growth processes as the strain is accumulated.