[17p-P10-1~93] 10 スピントロニクス・マグネティクス（ポスター）

▲ [17p-P10-5] Spin relaxation in Sn doped InP bulk

〇Masaya Takizawa¹、Daisuke Tanaka¹、Masayuki Iida¹、Shima Tanigawa¹、Atsushi Tackeuchi¹ (1.Waseda Univ.)

キーワード：spin relaxation, Sn doped InP, pump and probe measurement

In this study, we investigated the carrier relaxation and spin relaxation in Sn doped InP bulk by time-resolved pump and probe measurement. We also compared the results with those of our previous study done on undoped InP bulk. The carrier relaxation time of Sn doped InP bulk was 9.68 ps and 337 ps and the spin relaxation time was 20.2 ps in 10 K. The carrier relaxation time and the spin relaxation time was shorter in Sn doped InP bulk. It suggests that the Elliot-Yafet mechanism, which is a spin relaxation mechanism involving impurities, is effective.