[17p-P10-1~93] 10 スピントロニクス・マグネティクス（ポスター）

▲ [17p-P10-8] Simulation and Analysis of a Refracting-Facet Spin-Photodiode

〇(PC)Ronel Intal Roca¹、Nozomi Nishizawa¹、Hiro Munekata¹ (1.Tokyo Inst. Tech.)

キーワード：GaAs spintronics, spin-photodiode, spin-optoelectronics

We have recently experimentally demonstrated a refractive facet spin-photodiode (spin-PD) with a figure of merit F of as high as 0.4%. In this report, we developed a simulation model, based on (1) the drift-diffusion equations for charge and spins and (2) spin-dependent quantum tunneling eqautions, the in order to analyze the spin-PD. Using the model, we have determined the effective electron lifetime in the spin-PD to be 1.2 ps by compraring the simulated and experimental results. We have also determined that the difference in the spin-polarized density of states of the Fe contact to be 5*10²⁰ cm^-3 eV^-1 around the conduction band edge. This value is different to that near the Fermi-level of Fe. This result paves the way for further studies in novel materials for magnetic contacts of efficient spin-PDs.