[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-13] Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure

〇Sho Sonehara¹, Mutsunori Uenuma¹, Yuta Fujimoto¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:GaN, Power device, ALD