[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-12] Effects of post-deposition annealing in H₂ ambient on ALD-Al₂O₃/AlGaN/GaN MIS-HEMTs

〇Toshiharu Kubo¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

Keywords:GaN, HEMT, ALD

Electrical characteristics of the gate insuator are important for GaN-based power devices. We investigated the effects of H₂ annealing after Al₂O₃ deposition on the device characteristics of Al₂O₃/AlGaN/GaN MIS-HEMT. As the result, The dynamic threshold voltage shift and gate leakage current showed relatively low values of 0.5 V and 1×10^-6 mA/mm, respectively.