[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-20] Control of electrical properties using ion implantation and application to GaN-based integrated circuit (2)

〇Taichi Yokoyama¹, Kiyomasa Miwa¹, Hiroshi Okada¹, Hiroto Sekiguchi¹, Keisuke Yamane¹, Akihiro Wakahara¹ (1.Toyohashi Tech)

Keywords:Nitride semiconductor