[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-23] Evaluation of Electrical Properties and Re-grown Interface of AlGaN/GaN Structure using Re-growth Technique

〇Jumpei Tajima¹, Toshiki Hikosaka¹, Kenjiro Uesugi¹, Masahiko Kuraguchi¹, Shinya Nunoue¹ (1.TOSHIBA R&D Center)

Keywords:AlGaN/GaN, HEMT Sutructure, Regrowth

In the GaN electron devices using a re-growth method, in order to realize outstanding device property, control of a re-growth interface is important.This time, the influence of a re-growth interface to the electrical property of AlGaN/GaN structure was investigated. The electron mobility of the two dimensional electron gas generated to an AlGaN/GaN interface was decreased with a near distance from a re-growth interface. It was found that decrease of electron mobility was caused by Si impurities observed at the re-grown interface.