[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-3] Influence on the surface roughness of GaN by ICP-RIE using Cl2 and BCl3

〇Kota Uzaki¹, Go Imakuma¹, Satoko Shinkai² (1.Kyutech, 2.CMS)

Keywords:GaN, Dry etching, Surface roughness