[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-2] Characteristics of Schottky Barrier for p-GaN Epitaxial Layers on GaN Substrate

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Yuta Fukushima¹, Masaharu Edo¹ (1.Fuji Electric)

Keywords:semiconductor, p-GaN, Schottky barrier

Although it is difficult to obtain ohmic contact with p-type GaN, Schottky barrier characteristics can be evaluated by p+-GaN/p-GaN stacked structure. Using Ni with a large work function as a Schottky metal, IV characteristics close to the thermionic emission model were obtained.