[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

△ [17p-P12-6] Effect of High Pressure Water Vapor Annealing Condition for SiO₂/n-GaN Interface

〇Masaaki Furukawa^1,2, Uenuma Mutsunori², Fujimoto Yuta², Ishikawa Yasuaki², Yasuda Masahiro¹, Uraoka Yukiharu² (1.Osaka Pref. Univ., 2.NAIST)

Keywords:GaN, High Pressure Water Vapor Annealing