[17p-P3-1~22] 3.13 Semiconductor optical devices

[17p-P3-20] Annealing temperature time dependence on void opccupancy of directly-bonded InP/Si substrate

〇(M1)Natsuki Hayasaka¹, Yuya Onuki¹, Naoki Kamada¹, Xu Han¹, Masaki Aikawa¹, Kazuki Uchida¹, Hirokazu Sugiyama¹, Masaki Matsuura¹, Gandhi Kallarasan Periyanayagam¹, Hiromi Yada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:laser, InP/Si, directly-bonded