[17p-P8-1~24] 13.5 Semiconductor devices and related technologies

[17p-P8-1] Characteristic control buried-SiGe-channel p-MOSFET formed by sputter epitaxy

〇Takuma Yagi¹, Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Toshiaki Matsui², Yosiyuki Suda¹ (1.Tokyo Univ. of Agric.& Technol., 2.National Inst. of Inf. and Commun. Technol.)

Keywords:semiconductor, Device