[17p-P8-1~24] 13.5 Semiconductor devices and related technologies

[17p-P8-2] Si/SiGe High-Hole-Mobility-Transistor formed by Sputter Epitaxy

〇(M1)Shota Nozaki¹, Takahiro Tsukamoto¹, Akihumi Kasamatsu², Toshiaki Matsui², Nobumitsu Hirose², Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. and Technol., 2.National Inst. of Inf. and Commun. Technol.)

Keywords:semiconductor, device