Si/SiGe hole-tunneling RTD with high-current density formed by sputter epitaxy

Presentation information

Poster presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

Sat. Mar 17, 2018 1:30 PM - 3:30 PM P8 (P)

1:30 PM - 3:30 PM

〇Minoru Wakiya¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol.)

Keywords:resonant tunneling diode