[17p-P8-1~24] 13.5 Semiconductor devices and related technologies

[17p-P8-8] Theoretical analysis of microwave detection in p-GaAsSb/n-InGaAs backward diodes

〇Michihiko Suhara¹, Shinpei Yamashita², Shoma Tanaka², Sho Kumagai², Yuya Ishiguro¹, Kiyoto Asakawa³, Kenichi Kawaguchi^4,5, Tsuyoshi Takahashi^4,5, Masaru Sato^4,5, Naoya Okamoto^4,5 (1.Tokyo Metro. Univ., 2.Tokyo Metro. Univ. Urban Lib., 3.Tokyo Metro. College, 4.Fujitsu Ltd., 5.Fujitsu Labs.)

Keywords:backward diode, GaAsSb/InGaAs, voltage detection sensitivity

Current-voltage (I-V) characteristics of p-GaAsSb/n-InGaAs backward diodes (BWDs) are modeled and analyzed with respect to experimental current-voltage characteristics. Capacitance components of BWDs are also evaluated from measured S-parameters. According to the I-V and capacitance, voltage detection sensitivity is analyzed. For example, ten to the power of seven in the voltage sensitivity is predicted for the BWD with 2 micrometers of the mesa deameter.