[17p-P8-1~24] 13.5 Semiconductor devices and related technologies

△ [17p-P8-9] Analysis of nonlinear differential conductance in triple-barrier resonant tunneling diodes

〇Masataka Nakanishi¹, Naoto Okumura², Michihiko Suhara², Kiyoto Asakawa³ (1.Tokyo Metro.Univ. Urban Lib., 2.Tokyo Metro.Univ., 3.Tokyo Metro.College)

Keywords:triple-barrier resonant tunneling diodes, nonlinear differential conductance, Lorentz function

Higher order components of nonlinear differential conductance Gn (n=1,2,3) in triple-barrier resonant tunneling diodes (RTDs) are analyzed with respect to experimental current-voltage characteristics. It is found that magnitude of Gn is varied with varying bias voltage. Each Gn is derived by Taylor expansion of theoretical expression of current-voltage characteristics taking Lorentz type of resonant energy broadening into account. The higher order components of nonlinear differential conductance effects on dynamical properties of RTDs such as relaxation oscillation in terahertz regime.