10:30 〜 10:45
▲ [18a-B203-6] Modulation Response of an Electro-absorption Modulator Integrated with Transverse Coupled Cavity VCSELs
キーワード：VCSEL, EXTERNAL MODULATOR
Semiconductor lasers, especially VCSELs, have been widely used as data transmitters to construct cost-effective high-speed infrastructure . A key challenge currently is to achieve higher modulation bandwidth of VCSELs to meet the demand for rapidly growing data traffics. Earlier works from our lab have shown that transverse coupled cavity VCSELs (TCC-VCSELs) can achieve a bandwidth enhancement through direct modulation. On the other hand, the integration of an electro-absorption modulator is also a good candidate to realize high-speed operation beyond the limit of direct modulation. In our group, we firstly proposed and demonstrated the lateral integration of VCSEL and slow-light modulator with limited coupled power. In our previous paper. we presented the laterally coupled VCSEL and slow light modulator with a rather high coupled power and extinction ratio. In this paper, we explore the dynamic modulation response of the structure in paper.