[18a-B301-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [18a-B301-9] Enhanced Etching of Ge Surfaces Assisted by Reduced Graphene Oxide and Its Mechanism

〇Tomoki Hirano¹, Kazuki Nakade¹, Shaoxian Li¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

Keywords:semiconductor surface, reduced graphene oxide, etching

Single flakes of reduced graphene oxide (rGO) were dispersed on a Ge surface. After the sample was immersed in water, the resulting surface was imaged by atomic force microscopy. We found that a Ge surface beneath an rGO flake was selectively etched, and revealed the fundamental property of this graphene-assisted chemical etching. In addition, based on the obtained results, we propose an etching mechanism as well as experimental parameters to determine an etching rate.