The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)

Kenji Shiojima(Univ. of Fukui)

9:30 AM - 9:45 AM

[18a-C302-3] GaN Shottky Barrier Diodes with NiN Electrode for Microwave Power Rectification

Taiki Hoshi1, Xiaobo Li1, Jin-Ping Ao1 (1.Tokushima Univ.)

Keywords:Nickel Nitride, Schottky Barrier Diode