Investigation of leakage origin of pn diode on free-standing GaN substrate by 3DAP and LACBED method

Shigeyoshi Usami; Yoshihiro Sugawara; Yongzhao Yao; Yukari Ishikawa; Norihito Mayama; Kazuya Toda; Yuto Ando; Atsushi Tanaka; Kentaro Nagamatsu; Maki Kushimoto; Manato Deki; Shugo Nitta; Yoshio Honda; Hiroshi Amano

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)

Kenji Shiojima(Univ. of Fukui)

10:00 AM - 10:15 AM

△ [18a-C302-5] Investigation of leakage origin of pn diode on free-standing GaN substrate by 3DAP and LACBED method

〇Shigeyoshi Usami¹, Yoshihiro Sugawara², Yongzhao Yao², Yukari Ishikawa^2,4, Norihito Mayama³, Kazuya Toda³, Yuto Ando¹, Atsushi Tanaka^4,5, Kentaro Nagamatsu⁴, Maki Kushimoto¹, Manato Deki⁴, Shugo Nitta⁴, Yoshio Honda⁴, Hiroshi Amano^4,6,7 (1.Nagoya univ., 2.JFCC, 3.Toshiba Nanoanalysis corp., 4.IMaSS, 5.NIMS, 6.ARC, 7.VBL)

Keywords:3DAP, pn diode, LACBED