[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

[18a-C302-4] Growth condition dependency of reverse leakage current of pn diode on free-standing GaN substrate

〇(DC)Shigeyoshi Usami¹, Hayata Fukushima¹, Yuto Ando¹, Atsushi Tanaka^2,3, Kentaro Nagamatsu², Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,4,5 (1.Nagoya univ., 2.IMaSS, 3.NIMS, 4.ARC, 5.VBL)

Keywords:pn diodes, reverse leakage current, Emission microscopy