Shigeyoshi Usami

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

9:45 AM - 10:00 AM

[18a-C302-4] Growth condition dependency of reverse leakage current of pn diode on free-standing GaN substrate

〇(DC)Shigeyoshi Usami¹, Hayata Fukushima¹, Yuto Ando¹, Atsushi Tanaka^2,3, Kentaro Nagamatsu², Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,4,5 (1.Nagoya univ., 2.IMaSS, 3.NIMS, 4.ARC, 5.VBL)

10:00 AM - 10:15 AM

△ [18a-C302-5] Investigation of leakage origin of pn diode on free-standing GaN substrate by 3DAP and LACBED method

〇Shigeyoshi Usami¹, Yoshihiro Sugawara², Yongzhao Yao², Yukari Ishikawa^2,4, Norihito Mayama³, Kazuya Toda³, Yuto Ando¹, Atsushi Tanaka^4,5, Kentaro Nagamatsu⁴, Maki Kushimoto¹, Manato Deki⁴, Shugo Nitta⁴, Yoshio Honda⁴, Hiroshi Amano^4,6,7 (1.Nagoya univ., 2.JFCC, 3.Toshiba Nanoanalysis corp., 4.IMaSS, 5.NIMS, 6.ARC, 7.VBL)

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