[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

[18a-C302-6] GaN p-n Diodes with High Breakdown Capability

Hiroshi Ohta¹, Kentaro Hayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², 〇Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:GaN, p-n diode

By reducing acceptor concentration in p-GaN layer, punch-through induced non-destructive breakdown has been realized in high breakdown voltage vertical GaN p-n diodes for the first time.