Improvement of Breakdown Voltage of Vertical GaN Diode by Ga<sub>2</sub>O<sub>3 </sub>Passivation

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)

Kenji Shiojima(Univ. of Fukui)

10:45 AM - 11:00 AM

〇Yoshihiro Ueoka¹, Manato Deki², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Idemitsu Kosan, 2.Nagoya Univ. IMaSS, 3.Nagoya Univ. ARC, 4.Nagoya Univ. VBL)

Keywords:GaN, diode, Ga2O3