[18a-D101-1~10] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [18a-D101-8] Evaluation of ITO/a-Si interface properties by Hard X-ray Photoemission Spectroscopy

〇(B)Tappei Nishihara¹, Takuto Kojima¹, Takuya Hiyama¹, Hideki Matsumura², Takefumi Kamioka³, Yoshio Ohshita³, Satoshi Yasuno⁴, Ichiro Hirosawa⁴, Atsushi Ogura¹ (1.Meiji Univ., 2.JAIST, 3.Toyota Tech Inst., 4.JASRI)

Keywords:Heterojunction with Intrinsic Thin-Layer solar cell, ITO, HAXPES

In the HIT type solar cell, a transparent conductive film is inserted between a metal electrode and a - Si, and an ITO (Indium - Tin - Oxide) film is often used. Generally, an inexpensive sputtering method (SPT) is generally used for deposition an ITO film, but it is anticipated the ITO deposition by conventional physical vapor deposition techniques may induce damages on the a-Si surface and cause cell performance deterioration. Therefore, there are several techniques proposed to suppress the deposition damage, namely reactive plasma deposition (RPD) and improved sputtering.In this study, the ITO/a-Si interface properties formed by the improved SPT and RPD techniques were evaluated using HAXPES.