The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[18a-D104-4~11] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3のコードシェアセッションあり

Sun. Mar 18, 2018 10:00 AM - 12:00 PM D104 (56-104)

Shigemi Mizukami(Tohoku Univ.)

10:15 AM - 10:30 AM

[18a-D104-5] CoFeB/MgAl2O4/CoFeB magnetic tunnel junctions with a large magnetoresistance over 240% at room temperature

Ikhtiar .1, 〇Hiroaki Sukegawa1, Xiandong Xu1, Mohamed Belmoubarik1, Hwachol Lee1, Shinya Kasai1, Kazuhiro Hono1 (1.NIMS)

Keywords:magnetic tunnel junction, tunnel magnetoresistance

Recently large tunnel magnetoresistance (TMR) ratios exceeding 300% have been reported in epitaxial MgAl2O4 spinel-based (Mg-Al-O) magnetic tunnel junctions (MTJs). However, polycrystalline Mg-Al-O MTJs failed to show a large TMR ratio due to the difficulty to obtain crystalline Mg-Al-O on CoFeB. In this study, we demonstrated a large TMR ratio over 240% through the achievement of a highly-(001) textured CoFeB/Mg-Al-O/CoFeB structure.