[18a-D104-4~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [18a-D104-5] CoFeB/MgAl₂O₄/CoFeB magnetic tunnel junctions with a large magnetoresistance over 240% at room temperature

Ikhtiar .¹、〇Hiroaki Sukegawa¹、Xiandong Xu¹、Mohamed Belmoubarik¹、Hwachol Lee¹、Shinya Kasai¹、Kazuhiro Hono¹ (1.NIMS)

キーワード：magnetic tunnel junction, tunnel magnetoresistance

Recently large tunnel magnetoresistance (TMR) ratios exceeding 300% have been reported in epitaxial MgAl₂O₄ spinel-based (Mg-Al-O) magnetic tunnel junctions (MTJs). However, polycrystalline Mg-Al-O MTJs failed to show a large TMR ratio due to the difficulty to obtain crystalline Mg-Al-O on CoFeB. In this study, we demonstrated a large TMR ratio over 240% through the achievement of a highly-(001) textured CoFeB/Mg-Al-O/CoFeB structure.