[18a-D104-4~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [18a-D104-8] Theoretical prediction of large perpendicular magnetic anisotropy
at Fe/CuIn_1-xGa_xSe₂ interface

〇Keisuke Masuda¹、Shinya Kasai¹、Yoshio Miura^1,2、Kazuhiro Hono¹ (1.NIMS、2.KIT)

キーワード：interfacial perpendicular magnetic anisotropy, semiconductor tunnel barrier, magnetic random access memory (MRAM)

We studied interfacial magnetocrystalline anisotropy in various Fe/semiconductor heterostructures including Fe/CuIn_1-xGa_xSe₂. By estimating interfacial anisotropy constants K_i in these systems, we show that most of the systems exhibit perpendicular magnetic anisotropy. In particular, we found that Fe/CuInSe₂ has the largest K_i of 2.305 mJ/m², which is 1.6 times as large as that of Fe/MgO. Thus, we conclude that Fe/CuInSe₂/Fe may be suitable for applications to magnetic random access memories (MRAMs).