The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 18, 2018 9:00 AM - 12:15 PM E201 (57-201)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.)

10:00 AM - 10:15 AM

[18a-E201-4] Analysis of the interface between IGZO and ionic liquid, and the effect of Self-assembled Mono interlayer

Kenta Komori1, Hiromi Okada1, Mami Fujii1, Kazumoto Miwa2, Shimpei Ono2, Bermundo Juan Paolo Soria1, Yasuaki Ishikawa1, Yukiharu Uraoka1 (1.NAIST, 2.CRIEPI)

Keywords:Ionic Liquid, Self-Assembled Monolayer