[18a-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-E201-5] Low voltage operation of InGaZnO thin-film transistor using Ta₂O₅ gate insulator

Takanori Takahashi¹, Takeshi Hoga¹, Ryoko Miyanag², Mami N. Fujii², Yasuaki Ishikawa², Yukiharu Uraoka Yukiharu Uraoka², 〇Kiyoshi Uchiyama¹ (1.NIT, Tsuruoka, 2.NAIST)

Keywords:Thin Film Transistor, high-k gate material

IGZO based thin film transistors (TFTs) with a high-k Ta₂O₅ gate oxide have successfully fabricated. The fabricated TFTs showed good low voltage operating properties as well as higher μ_FE and lower S.S values. These results indicate that the use of high-k gate in TFTs is the key for improving TFT properties.