[18a-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-E201-6] [Young Scientist Presentation Award Speech] Depth analysis of near-valence band maximum states in amorphous oxide semiconductor by total reflection hard X-ray photoelectron spectroscopy

〇Keisuke Ide¹, Masato Ota¹, Yosuke Kishida¹, Takayoshi Katase¹, Hidenori Hiramatsu^1,2, Shigenori Ueda³, Hideya Kumomi², Hideo Hosono^1,2, Toshio Kamiya^1,2 (1.MSL, 2.MCES, 3.NIMS)

Keywords:amorphous oxide semiconductor, photoelectron spectroscopy

a-In-Ga-Zn-O (a-IGZO) has a large amount of subgap state just above valence-band maximum and it causes the response to the visible light and deteriorate the transistor operation. We previously reported some origins of this state by bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES). In this report, we will talk about depth analysis of near-valence band maximum staets by total reflection HAXPES, which enable to extract non-destructively depth information and interface state corresponding to the channel of transistors.