[18a-E202-1~10] 15.4 III-V-group nitride crystals

[18a-E202-1] Effects of NH₃/H₂ ratio on the polycrystal formation during GaN growth using OVPE method

〇Shintaro Tsuno¹, Yoshikazu Gunji¹, Yohei Yamaguchi¹, Keiju Ishibashi¹, Akira Kitamoto¹, Msayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Tomoaki Sumi³, Junichi Takino^1,3, Yoshio Okayama^1,3, Masaki Nobuoka³, Yusuke Mori¹ (1.Osaka Univ., 2.Itochu Plastics Inc., 3.Panasonic Corporation)

Keywords:Gallium Nitride, OVPE

OVPE method is suitable for long-term growth of GaN without generating solid by-products. However, polycrystals generating on GaN surface during long-term growth cause degrading crystallinity. In this study, we investigated the effects of NH3/H2 ratio on the polycrystal formation.