[18a-E202-1~10] 15.4 III-V-group nitride crystals

[18a-E202-2] Effect of Mathane Additive on GaN Growth using OVPE Method

〇Akira Kitamoto¹, Yohei Yamaguchi¹, Shintaro Tsuno¹, Keiju Ishibashi¹, Yoshikazu Gunji¹, Masayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Tomoaki Sumi³, Junichi Takino^1,3, Yoshio Okayama^1,3, Masaki Nobuoka³, Yusuke Mori¹ (1.Osaka Univ., 2.Itochu Plastics Inc., 3.Panasonic Corporation)

Keywords:gallium nitride

Oxide Vapor Phase Epitaxy method is suitable for long-term growth of GaN without generating solid by-products. However it was confirmed that H₂O vapor in a growth zone led to the degradation of crystallinity of GaN layers and increasing of polycrystal density. In this study, we attempted to grow GaN layers with methane for reduction of H₂O partial pressure in a growth zone and investigated the effects of methane additive on the crystallinity.