[18a-E202-1~10] 15.4 III-V-group nitride crystals

[18a-E202-3] Improvement of surface flatness of HVPE-grown homo-epitaxial GaN layers

〇Hajime Fujikura¹, Taichiro Konno¹ (1.SCIOCS)

Keywords:GaN, HVPE, surface flatness

HVPE-conditions for realization of highly flat GaN surface in GaN on GaN growth were studied in details. Suppression of surface etching during pre-growth period was found to be effective to keep the surface flat. Additionally, macro-steps frequently observed in thick GaN on GaN growth can be explained in terms of facet-growth mechanism and was found to be suppressed by high temperatures growth.