[18a-E202-1~10] 15.4 III-V-group nitride crystals

[18a-E202-5] Facet growth of GaN with low dislocation density using Ga,N double polarity
by Hydride Vapor Phase Epitaxy

〇Tatsuya Ezaki¹, Yusuke Shigefuji², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Technology for Innovation Yamaguchi Univ., 2.Department of Eng., Yamaguchi Univ.)

Keywords:GaN, HVPE, dislocation