[18a-E202-1~10] 15.4 III-V-group nitride crystals

[18a-E202-6] Influence of off angle of stripe-mask on selective area growth and crystalline quality of GaN by hydride vapor phase epitaxy

〇Fijun Kim¹, Hiroki Ikeuchi², Ryo Inomoto², Narihito Okada², Kazuyuki Tadatomo² (1.Department of Eng.,Yamaguchi Univ., 2.Grad.School of Sci.&Tech.for Innovation,Yamaguchi Univ.)

Keywords:GaN, hydride vapor phase epitaxy, off angle