[18a-F206-1~9] 6.2 Carbon-based thin films

△ [18a-F206-3] Annihilation of threading dislocations in diamond by foreign elements doping

〇Shinya Ohmagari¹, Hideaki Yamada¹, Nobuteru Tsubouchi¹, Shingo Tanaka², Akiyoshi Chayahara¹, Hitoshi Umezawa¹, Yoshiaki Mokuno¹ (1.AIST ADPERC, 2.AIST RIECEN)

Keywords:diamond, dislocation, impurity

Threading dislocations (TDs) in semiconductor crystals are desirebly reduced as much as possible because they cause deterioration of various device characteristics. However, for diamond, low-dislocation technology typified by necking method has not established. Since TDs in the substrates are generally taken over 100% during CVD growth, control of the propagation direction is crucial. Here, we propose a new technology to control dislocation propagation: foreign elements doping during crystal growth to control TDs propagation. The annihilation of TDs by intorduction of atomic level impurities from filament wires was verified based on hot-filament CVD single-crystal growth. A significant reduction of dislocation density below 1/10 was confirmed, possibly due to interaction between impurity and TDs.