[18a-F206-1~9] 6.2 Carbon-based thin films

[18a-F206-7] Application of laser-induce doping to singlecrystalline diamond

〇Tsuyoshi Yoshitake¹, Eslam Abubakr^1,2, Abdelrahman Zkria^1,2, Hiroshi Ikenoue³ (1.Kyushu Univ., 2.Aswan Univ., 3.Kyushu Univ)

Keywords:diamond, doping, laser

Laser-induced phosphorus doping in liquid was applied to 001-oriented singlecrystalline diamond. The experiments were made by employing an ArF excimer laser with a wavelength of 193 nm and phosphoric acid liquid. The surface resistivity gradually decreased with increasing laser fluence and number of pulsed laser irradiation, and the resistance decreased with increasing temperature, which implies that the surface layer is semiconducting. From the depth profile of secondary ion mass spectrometric measurements, the incorporation of phosphorus atoms up to 30 nm depths from the surface was confirmed. The mechanism of the phosphorus incorporation into singlecrystalline diamond including the crystalline structure of the phosphorus-incorporated region and damage of the laser irradiation are under investigation.