[18a-G203-1~10] 13.5 Semiconductor devices and related technologies

[18a-G203-3] Fabrication of InGaAs Nanosheet Transistors

〇Toru Kanazawa¹, Kazuto Ohsawa¹, Tomohiro Amemiya¹, Nobukazu Kise¹, Ryosuke Aonuma¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech)

Keywords:MOSFET, III-V compound semicondeuctor, Nanosheet

The multi-gate structure is promising to achieve extremely scaled and low power transistors with suppressed short channel effects. Vertically stacked nanosheet transistor is a novel 3D device structure proposed recently. Here we report the fabrication and characterization of the stacked InGaAs nanosheet transistors with high electron mobility III-V semiconductor channels and heavily n-doped epitaxial source.