[18a-G203-1~10] 13.5 Semiconductor devices and related technologies

[18a-G203-4] Fabrication of InAs-on-Insulator structures by Smart Cut method

〇Kei Sumita¹, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, Faculty of Eng, 2.The Univ. of Tokyo, School of Eng)

Keywords:InAs, wafer bonding, Smart Cut

Smart Cut method is a promising method to fabricate OI (On-Insulator) structures. In this work, InAs-OI structure was demonstrated by Smart Cut method. Ions were implanted at room temperature, which is much higher than that reported in previous works. We also report that the flatness of the split InAs-OI is dependent on the surface orientation.