[18a-G203-1~10] 13.5 Semiconductor devices and related technologies

[18a-G203-5] Parameter Dependence of Steep Slope PN-Body Tied SOI FET Investigated by Voltage-based MOS-Gated Thyristor Equivalent Circuit Model

〇(M2)DAIKI UEDA¹, KIYOSHI TAKEUCHI¹, MASAHARU KOBAYASHI¹, TOSHIRO HIRAMOTO¹ (1.Univ. of Tokyo)

Keywords:steep subthreshold slope, PN-body tied SOI FET, MOS-gated thyristor