[18a-G203-1~10] 13.5 Semiconductor devices and related technologies

[18a-G203-9] Proposal of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment

〇Kimihiko Kato¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

Keywords:tunneling FET, oxide semiconductor, group-IV semiconductor

A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semiconductors and group-IV-semiconductors with type-II energy band alignment is proposed. TCAD simulation revealed that the proposed bilayer device structure has remarkably high potential for steep-slope transistors with high-compatibility with Si CMOS platform and the TFET device performance can be maximized by advanced Ge or SiGe technologies.