[18a-G204-1~8] 13.8 Optical properties and light-emitting devices

[18a-G204-5] Fabrication and luminescence properties of microdisk made from Eu doped GaN

〇Yutaka Sasaki¹, Inaba Tomohiro¹, Tatebayashi Jun¹, Hujiwara Yasufumi¹ (1.Osaka Univ.)

Keywords:nitride semiconductor, rare earth, microdisk

We have so far demonstrated Eu-doped GaN (GaN:Eu) red light-emitting diodes (LED). In this conribution, we report on the fabrication and optical properites of GaN:Eu-based microdisk structures towards realization of rare-earth doped semiconductor lasers.