[18a-G204-1~8] 13.8 Optical properties and light-emitting devices

[18a-G204-6] Surface morphologies and photoluminescence properties of Tm-doped AlGaN on GaN or AlN templates grown by organometallic vapor phase epitaxy

〇Junichi Takatsu¹, Ryoken Fuji¹, Jun Tatebaya¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:rareearth ions, Tm, AlGaN

The AlGaN:Tm on GaN template or AlN template were grown by using OMVPE. Surface morphologies and photoluminescence properties were investigated.