6:00 PM - 6:15 PM
[18p-A202-13] An Analysis of Short Channel Effects in III-V FinFETs using a Quantum Drift Diffusion Model
Keywords:semiconductor device simulation, FinFET, short channel effects
In this presentation, we will present an analysis of short channel effects in Si, In0.53Ga0.47As, and GaSb FinFETs using a hybrid MPI/OpenMP parallelized code of a quantum drift diffusion model. We will present a gate length dependency of the subthreshold slope (SS) and drain induced barrier lowering (DIBL) effect.