5:45 PM - 6:00 PM
[18p-A202-12] Device Simulation of Reliability for Advanced Semiconductor Devices
Keywords:reliability, device simulation, ESD
Reliability of LSI has become an important technological issue as the devie-size scaling. ESD, electro-migration, NBTI/PBTI are the typical origin of reliability degradation. We have sucessfully established the device simulation of the accurate estimation of ESD by reproducing the experimental results of pulse-number of breakdown based on the modeling of the gate dielectric breakdown. The device simulation of the reliability-worse place of the circuit found by the circuit reliability simulation enables the circuit design of reliability with a good prospects.