5:30 PM - 5:45 PM
△ [18p-A202-11] Relaxation of Self-Heating-Effect for Lateral-Stacked Silicon-NW FETs with Source/Drain-Recessed Contact Structure
Keywords:nanowire, self-heating-effect
Gate-All-Around (GAA) nanowire (NW) FETs offer an optimal electrostatic control, thereby expected one of the promising candidates in sub-10-nm technology nodes. Maximizing the drive current per footprint using lateral stacked- or vertical NW has been considered lately. However, in the GAA-NWs and/or SOI technology, self-heating-effects (SHEs) is becoming serious problem. In this work, in order to mitigate the SHEs in GAA-NW FETs, we investigate lateral stacked-NW on bulk-fin with recessed contact structure.