Comparative discussion of non-equilibrium Green’s function method and "Top of the Barrier" model for nanoscale device simulation

Presentation information

Symposium (Oral)

Symposium » Semiconductor Device Simulation: Applications and Future Perspectives

Sun. Mar 18, 2018 1:15 PM - 6:40 PM A202 (54-202)

Nobuya Mori(Osaka Univ.), Koichi Fukuda(AIST), Akira Hiroki(Kyoto Inst. of Tech.), Kenichiro Sonoda(Renesas), Nobutoshi Aoki(Toshiba Memory)

6:15 PM - 6:30 PM

〇SATOFUMI SOUMA¹, NAOSUKE OKA¹, YUYA SOTODA¹, RYOMA SHIMIZU¹, MATSUTO OGAWA¹ (1.Kobe Univ.)

Keywords:Device simulation, Nanoscale transistor