[18p-B203-1~17] 3.13 Semiconductor optical devices

[18p-B203-12] Preparation of PbCaS/PbS DH structure on Si substrate and properties of optically pumped laser emission

〇Akihiro Ishida¹, Shota Inaba¹, Shintaro Hashiguchi¹, Hiroki Akigawa¹, Seisuke Nakashima¹ (1.Shizuoka Univ.)

Keywords:Mid-infrared laser, Optically pumped laser, IV-VI semiconductor

We prepared PbCaS/PbS optically pumped short-cavity mid-infrared laser on Si(111) substrate. The DH structure was grown by HWE, and short cavity with stripe width 3μm and stripe length 25μm was prepared by FIB process. Laser operation was obtained up to 322K (49 ℃) .